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參數(shù)資料
| 型號： | 934031130115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.9 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | PLASTIC, SMD, SMA, PMOS, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 934031130115 |
2000 Jul 03
3
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYG60 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 m, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m, see Fig.7.
For more information please refer to the
‘General Part of associated Handbook’.
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to surge;
inductive load switched off
BYG60D to J
10
mJ
BYG60K and M
7mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.4
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max; see Fig.5
0.98
V
IF = 1 A; see Fig.5
1.2
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYG60D
300
V
BYG60G
500
V
BYG60J
700
V
BYG60K
900
V
BYG60M
1100
V
IR
reverse current
VR =VRRMmax;
see Fig.6
5
A
VR =VRRMmax; Tj = 165 °C;
see Fig.6
100
A
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
BYG60D to J
250
ns
BYG60K and M
300
ns
Cd
diode capacitance
VR = 0 V; f = 1 MHz
BYG60D to J
30
pF
BYG60K and M
25
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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