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參數資料
| 型號： | 934031120135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2.1 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | PLASTIC, SMD, SMA, PMOS, 2 PIN |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 934031120135 |
1996 May 24
3
Philips Semiconductors
Preliminary specication
Controlled avalanche rectiers
BYG50 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 m, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m, see Fig.7.
For more information please refer to the
“General Part of associated Handbook”.
ERSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
BYG50D to J
10
mJ
BYG50K and M
7
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.4
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF =1A; Tj =Tj max; see Fig.5
0.85
V
IF = 1 A; see Fig.5
1.00
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYG50D
300
V
BYG50G
500
V
BYG50J
700
V
BYG50K
900
V
BYG50M
1100
V
IR
reverse current
VR =VRRMmax; see Fig.6
1
A
VR =VRRMmax; Tj = 165 °C; see Fig.6
100
A
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
2
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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