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參數(shù)資料
| 型號： | 934019370135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 19.25 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, SMD, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 53K |
| 代理商： | 934019370135 |
1998 Sep 15
2
Philips Semiconductors
Product specication
UHF variable capacitance diode
BB135
FEATURES
Excellent linearity
Very small plastic SMD package.
C28: 1.9 pF; ratio: 10
Low series resistance.
APPLICATIONS
Electronic tuning in UHF television
tuners.
Radio upconversion concepts
VCO.
DESCRIPTION
The BB135 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
The matched type, BB134 has the
same specification.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
30
V
IF
continuous forward current
20
mA
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+125
°C
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: P5.
Cathode side indicated by a bar.
handbook, 4 columns
ka
MAM130
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. VR is the value at which Cd = 9 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IR
reverse current
VR = 30 V; see Fig.3
10
nA
VR =30V; Tj =85 °C; see Fig.3
200
nA
rs
diode series resistance
f = 470 MHz; note 1
0.75
Cd
diode capacitance
VR = 0.5 V; f = 1 MHz; see Figs 2 and 4
17.5
21
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4
1.7
2.1
pF
capacitance ratio
f = 1 MHz
8.9
12
C
d 0.5V
()
C
d28V
()
----------------------
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