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參數(shù)資料
| 型號： | 934019200112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934019200112 |
2001 Oct 25
4
Philips Semiconductors
Product specication
1000 MHz, 18.5 dB gain push-pull amplier
BGY1085A
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 541.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 596.5 MHz.
2. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 746.5 MHz.
3. fp = 55.25 MHz; Vp = 40 dBmV;
fq = 931.25 MHz; Vq = 40 dBmV;
measured at fp +fq = 986.5 MHz.
4. fp = 590.25 MHz; Vp =Vo;
fq = 597.25 MHz; Vq =Vo 6 dB;
fr = 599.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 588.25 MHz.
5. fp = 740.25 MHz; Vp =Vo;
fq = 747.25 MHz; Vq =Vo 6 dB;
fr = 749.25 MHz; Vr =Vo 6 dB;
measured at fp +f fr = 738.25 MHz.
6. fp = 980.25 MHz; Vp =Vo;
fq = 987.25 MHz; Vq =Vo 6 dB;
fr = 989.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 978.25 MHz.
7. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
d2
second order distortion
note 1
72
dB
note 2
65
dB
note 3
68
dB
Vo
output voltage
dim = 60 dB
note 4
61
dBmV
note 5
60
dBmV
note 6
57
dBmV
F
noise gure
f = 50 MHz
5.5
dB
f = 550 MHz
6dB
f = 600 MHz
6dB
f = 650 MHz
6.5
dB
f = 750 MHz
7dB
f = 860 MHz
7.5
dB
f = 1000 MHz
7.5
dB
Itot
total current consumption (DC)
note 7
240
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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