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參數(shù)資料
| 型號： | 934006630112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大小： | 105K |
| 代理商： | 934006630112 |
September 1992
2
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF248
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for large signal
amplifier applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262 A1 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262 A1
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
halfpage
12
34
MSB008
Top view
55
MBB157
g2
g1
d2
d1
s
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
GP
ηD
(%)
class-AB
225
28
300
> 10
> 55
175
28
300
typ. 13
typ. 67
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