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參數(shù)資料
| 型號(hào)： | 934003960126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大小： | 107K |
| 代理商： | 934003960126 |
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April 1995
3
Philips Semiconductors
Product specication
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Device mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm
× 10 mm.
CHARACTERISTICS
Tj =25 °C unless otherwise specied
Drain-source voltage
VDS
max.
250 V
Gate-source voltage (open drain)
± V
GSO
max.
20 V
Drain current (DC)
ID
max.
300 mA
Drain current (peak)
IDM
max.
1.2 A
Total power dissipation up to Tamb =25 °C (note 1)
Ptot
max.
1 W
Storage temperature range
Tstg
65 to + 150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient (note 1)
Rth j-a
=
125 K/W
Drain-source breakdown voltage
min.
250 V
ID =10 A; VGS =0
V(BR) DSS
Drain-source leakage current
max.
1
A
VDS = 200 V; VGS =0
IDSS
Gate-source leakage current
max.
100 nA
± V
GS =20V; VDS =0
± IGSS
Gate threshold voltage
min.
max.
0.8
2.0
V
ID = 1 mA; VDS =VGS
VGS(th)
Drain-source on-resistance
typ.
max.
5.0
7.0
ID = 300 mA; VGS =10V
RDS (on)
ID = 20 mA; VGS = 2.4 V
RDS(on)
max.
10
Transfer admittance
min.
typ.
200
400
mS
ID = 300 mA; VDS =25V
Yfs
Input capacitance at f = 1 MHz
typ.
max.
65
90
pF
VDS = 25 V; VGS =0
Ciss
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