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參數(shù)資料
| 型號(hào)： | 934003790215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 31K |
| 代理商： | 934003790215 |
September 1995
3
Philips Semiconductors
Product specication
PNP 1 GHz switching transistor
PMBT3640
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Off characteristics
V(BR)CBO
collector-base breakdown voltage
IC = 100 A; IE =0
12
V
V(BR)CES
collector-emitter breakdown voltage
IC = 100 A; VBE =0
12
V
(BR)EBO
emitter-base breakdown voltage
IE = 100 A; IC =0
4
V
ICES
collector cut-off current
VCE = 6 V; VBE =0
0.01
A
V
CE = 6 V; VBE = 0; Tamb =65 °C
1
A
I
B
base current
VCE = 6 V; VBE =0
10
nA
On characteristics; pulse test: pulse width
≤ 300 s, duty cycle ≤ 2%.
hFE
DC current gain
IC = 10 mA; VCE = 0.3 V
30
120
I
C = 50 mA; VCE =1 V
20
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 1 mA
0.2
V
I
C = 50 mA; IB = 5 mA
0.6
V
I
C = 10 mA; IB = 1 mA; Tamb =65 °C
0.25
V
BEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
0.75
0.95
V
I
C = 10 mA; IB = 1 mA
0.8
1
V
I
C = 50 mA; IB = 5 mA
1.5
V
Small-signal characteristics
fT
transition frequency
IC = 10 mA; VCE =5 V;
f = 100 MHz
500
MHz
Cc
output capacitance
IE =0; VCB = 5 V; f = 1 MHz
3.5
pF
Ce
input capacitance
IC =0; VEB = 0.5 V; f = 1 MHz
3.5
pF
Switching times
td
delay time
VCC =6 V; IC = 50 mA;
VBE(off) = 1.9 V; IB1 = 5 mA
10
ns
ts
storage time
VCC =6 V; IC = 50 mA;
IB1 =IB2 = 5 mA
20
ns
tr
rise time
VCC =6 V; IC = 50 mA;
VBE(off) = 1.9 V; IB1 = 5 mA
30
ns
tf
fall time
VCC =6 V; IC = 50 mA;
IB1 = IB2 = 5 mA
12
ns
ton
turn-on time
VCC =6 V; IC = 50 mA;
VBE(off) = 1.9 V; IB1 = 5 mA
25
ns
V
CC = 1.5 V; IC = 10 mA;
IB1 = 0.5 mA
60
ns
toff
turn-off time
VCC =6 V; IC = 50 mA;
VBE(off) = 1.9 V; IB1 =IB2 = 5 mA
35
ns
VCC = 1.5 V; IC = 10 mA;
IB1 = IB2 = 0.5 mA
75
ns
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