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參數(shù)資料
| 型號(hào)： | 934003520112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 934003520112 |
2000 Oct 17
10
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF245B
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
Class-B operation; VDS =28V;IDQ =2 × 25 mA;
RGS =10 ; PL = 30 W (total device).
handbook, halfpage
0
100
200
400
10
0
5
300
MGP188
Zi
(
)
ri
xi
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
Class-B operation; VDS =28V;IDQ =2 × 25 mA;
RGS =10 ; PL = 30 W (total device).
handbook, halfpage
0
30
20
10
0
100
200
400
300
MGP189
ZL
(
)
RL
XL
f (MHz)
Fig.15 Definition of MOS impedance.
handbook, halfpage
MBA379
Zi
ZL
Fig.16 Power gain as a function of frequency,
typical values per section.
Class-B operation; VDS =28V;IDQ =2 × 25 mA;
RGS =10 ; PL = 30 W (total device).
handbook, halfpage
0
100
200
400
20
25
0
10
15
5
300
MGP190
Gp
(dB)
f (MHz)
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