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參數(shù)資料
| 型號： | 934000180115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 49K |
| 代理商： | 934000180115 |
1995 Sep 12
3
Philips Semiconductors
Product specication
PNP 5 GHz wideband transistor
BFG31
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim = 60 dB; IC = 70 mA; VCE = 10 V; RL =75 ; Tamb =25 °C;
Vp =Vo at dim = 60 dB; fp = 850.25 MHz;
Vq =Vo 6 dB; fq = 858.25 MHz;
Vr =Vo 6 dB;fr = 860.25 MHz;
measured at f(p+qr) = 848.25 MHz.
3. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL =75 ; Tamb =25 °C;
Vp =Vo = at dim = 60 dB; fp = 445.25 MHz;
Vq =Vo 6 dB; fq = 453.25 MHz;
Vr =Vo 6 dB; fr = 455.25 MHz;
measured at f(p+qr) = 443.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 135 °C; note 1
40 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 10 mA
20
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
18
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
3
V
ICBO
collector cut-off current
IE = 0; VCB = 10 V
1
A
hFE
DC current gain
IC = 70 mA; VCE = 10 V;
Tamb =25 °C
25
Ccb
collector-base capacitance
IC = 0; VCB = 10 V; f = 1 MHz;
1.8
pF
Ceb
emitter-base capacitance
IC = 0; VEB = 10 V; f = 1 MHz
5
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz;
Tamb =25 °C
1.6
pF
fT
transition frequency
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
5
GHz
GUM
maximum unilateral power gain; note 1
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
16
dB
IC = 70 mA; VCE = 10 V;
f = 800 MHz; Tamb =25 °C
12
dB
Vo
output voltage
note 2
600
mV
Vo
output voltage
note 3
550
mV
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB.
log
=
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|---|---|
| 9340002-301 | 功能描述:熱電模塊 MS2,107,10,10,12,12, 11,W2 22.6x22.6x6.25 RoHS:否 制造商:Laird Technologies / Thermal Solutions 類型:Ceramic Plate Q最大:24 W ΔT最大:+ 63 C 最大電流:2.8 A 最大電壓:14.4 V 長度:30 mm 寬度:30 mm 高度:3.2 mm |
| 9340002-302 | 制造商:Laird Technologies Inc 功能描述:MS2,107,10,10,12,12,11,RT,W8 |
| 9340002-304 | 制造商:LAIRD TECHNOLOGIES - ENGINEERED THERMAL SOLUTIONS 功能描述:PELTIR MS2,107,10,10,12,12,00,W8 制造商:Laird Technologies Inc 功能描述:PELTIR MS2,107,10,10,12,12,00,W8 |
| 9340003-301 | 功能描述:熱電模塊 MS2 190 10 10 12 12 11 W2 30x30x6.5mm RoHS:否 制造商:Laird Technologies / Thermal Solutions 類型:Ceramic Plate Q最大:24 W ΔT最大:+ 63 C 最大電流:2.8 A 最大電壓:14.4 V 長度:30 mm 寬度:30 mm 高度:3.2 mm |
| 9340003-302 | 功能描述:MS2,190,10,10,12,12,11,RT,W8 制造商:laird technologies - engineered thermal solutions 系列:多級 零件狀態(tài):有效 外形尺寸 L x W x H:30.00mm x 30.00mm x 6.50mm 不同 Th 時的 Qmax:16.4W @ 25°C 不同 Th 時的 Delta Tmax:87°C @ 25°C 電流 - 最大值:2.9A 電壓 - 最大值:15.6V 電阻（歐姆）:- 工作溫度:80°C 特性:密封 - 硅樹脂 RTV 標(biāo)準(zhǔn)包裝:1 |
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