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參數(shù)資料
| 型號： | 933994040114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 933994040114 |
1997 Feb 18
6
Philips Semiconductors
Product specication
NPN microwave power transistor
MZ0912B50Y
Fig.4
Load power as a function of frequency;
(In broadband test circuit as shown in
Fig.3).
VCC = 50 V; tp =10 s; δ = 10%.
handbook, halfpage
0.95
1.05
1.15
1.25
f (GHz)
PL
(W)
70
50
60
MGL052
Fig.5
Collector efficiency as a function of
frequency; (In broadband test circuit as
shown in Fig.3).
handbook, halfpage
0.95
1.05
1.15
1.25
f (GHz)
η
C
(%)
50
40
45
MGL053
Fig.6 Optimum load impedance as a function of frequency, associated with input impedance.
VCC = 50 V; Zo =10 ; PL =50W.
handbook, full pagewidth
MGL049
0.2
0.5
1
2
5
0.2
0.5
1
2
10
5
10
∞
0
0.2
0.5
1
2
5
10
+ j
j
1.215 GHz
0.960 GHz
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