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參數(shù)資料
| 型號(hào)： | 933969480115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 933969480115 |
2001 May 31
3
Philips Semiconductors
Product specication
PNP Darlington transistors
BSP60; BSP61; BSP62
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
98
K/W
Rth j-s
thermal resistance from junction to solder point
17
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICES
collector cut-off current
BSP60
VBE = 0; VCE = 45 V
50
nA
BSP61
VBE = 0; VCE = 60 V
50
nA
BSP62
VBE = 0; VCE = 80 V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 4V
50
nA
hFE
DC current gain
VCE = 10 V; note 1; see Fig.2
IC = 150 mA
1000
IC = 500 mA
2000
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 0.5 mA
1.3
V
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C
1.3
V
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 0.5 mA
1.9
V
fT
transition frequency
IC = 500 mA; VCE = 5V;
f = 100 MHz
200
MHz
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = 0.5 mA
400
ns
toff
turn-off time
1500
ns
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