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參數(shù)資料
| 型號： | 933821820115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, UPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 44K |
| 代理商： | 933821820115 |
1999 Apr 14
3
Philips Semiconductors
Product specication
NPN switching transistor
PXT2222A
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
Rth j-s
thermal resistance from junction to soldering point
20
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =60V
10
nA
IE = 0; VCB = 60 V; Tamb = 125 °C
10
A
IEBO
emitter cut-off current
IC = 0; VBE =5V
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE = 10V
35
IC = 1 mA; VCE =10V
50
IC = 10 mA; VCE =10V
75
IC = 10 mA; VC =10V; Tamb = 55 °C35
IC = 150 mA; VCE =1V
50
IC = 150 mA; VCE = 10 V
100
300
IC = 500 mA; VCE =10V
40
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB =15mA
300
mV
IC = 500 mA; IB =50mA
1V
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA
0.6
1.2
V
IC = 500 mA; IB =50mA
2V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
8pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
25
pF
fT
transition frequency
IC = 20 mA; VCE = 10 V; f = 100 MHz
300
MHz
F
noise gure
IC = 200 A; VCE =5V; RS =2k;
f = 1 kHz; B = 200 Hz
4dB
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = 150 mA; IBon =15mA;
IBoff = 15 mA
35
ns
td
delay time
15
ns
tr
rise time
20
ns
toff
turn-off time
250
ns
ts
storage time
200
ns
tf
fall time
60
ns
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