參數(shù)資料
型號(hào)： 933821810185
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SST3, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 46K
代理商： 933821810185
1999 Apr 15
3
Philips Semiconductors
Product specication
NPN switching transistor
PMBT4401
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =60V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB =6V
50
nA
hFE
DC current gain
VCE = 1 V; (see Fig.2)
IC = 0.1 mA
20
IC = 1 mA
40
IC =10mA
80
IC = 150 mA; note 1
100
300
IC = 500 mA; VCE = 2 V; note 1
40
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 15 mA; note 1
400
mV
IC = 500 mA; IB = 50 mA; note 1
750
mV
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
950
mV
IC = 500 mA; IB = 50 mA; note 1
1.2
V
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
8pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
30
pF
fT
transition frequency
IC = 20 mA; VCE = 10 V; f = 100 MHz 250
MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA
35
ns
td
delay time
15
ns
tr
rise time
20
ns
toff
turn-off time
250
ns
ts
storage time
200
ns
tf
fall time
60
ns
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933821810215 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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