參數資料
型號： 933821340235
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SST3, 3 PIN
文件頁數： 3/8頁
文件大?。?/td> 46K
代理商： 933821340235
1999 Apr 15
3
Philips Semiconductors
Product specication
PNP switching transistor
PMBT4403
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 40 V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5V
50
nA
hFE
DC current gain
VCE = 1 V; (see Fig.2)
IC = 0.1 mA
30
IC = 1mA
60
IC = 10 mA
100
VCE = 2V
IC = 150 mA
100
300
IC = 500 mA
20
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 15 mA
400
mV
IC = 500 mA; IB = 50 mA
750
mV
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA
950
mV
IC = 500 mA; IB = 50 mA
1.3
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
8.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
35
pF
fT
transition frequency
IC = 20 mA; VCE = 10 V; f = 100 MHz 200
MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff =15mA
40
ns
td
delay time
15
ns
tr
rise time
30
ns
toff
turn-off time
350
ns
ts
storage time
300
ns
tf
fall time
50
ns
相關PDF資料
PDF描述
933821790185 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
933846830215 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
933821790215 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
933821790235 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
933846830235 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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