參數(shù)資料
型號(hào): 933817070112
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 6 A, 65 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 5/12頁
文件大小: 88K
代理商: 933817070112
September 1992
2
Philips Semiconductors
Product specication
HF power MOS transistor
BLF145
FEATURES
High power gain
Low noise figure
Good thermal stability
Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
applications in the HF frequency
range. The transistor is encapsulated
in a 4-lead, SOT123 flange envelope,
with a ceramic cap. All leads are
isolated from the flange. Matched
gate-source voltage (VGS) groups are
available on request.
PINNING - SOT123
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
k, halfpage
1
23
4
MSB057
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
Note
1. 2-tone efficiency.
MODE OF OPERATION
f
(MHz)
VDS
(V)
ID
(A)
PL
(W)
Gp
(dB)
ηD
(%)
(note 1)
d3
(dB)
SSB, class-A
28
1.3
8 (PEP)
> 24
< 40
SSB, class-AB
28
30 (PEP)
typ. 20
typ. 40
typ.
35
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933818950215 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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