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參數(shù)資料
| 型號： | 933817060112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 933817060112 |
September 1992
5
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF245
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values.
VGS =10V;
ID = 1.5 A.
handbook, halfpage
0
0.8
0.6
0.4
0
0.2
40
80
160
120
MGP170
RDS(on)
(
)
Tj (°C)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
010
20
40
240
40
200
30
160
120
80
MGP171
C
(pF)
VDS (V)
Cis
Cos
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
10
20
010
20
Crs
(pF)
VDS (V)
30
MRA920
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