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| 型號(hào)： | 933817040112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | 933817040112 |
September 1992
6
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF244
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 3 K/W; unless otherwise specied.
RF performance in CW operation in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
Zi
(
)
(note 1)
ZL
(
)
R1
(
)
CW, class-B
175
28
25
15
> 13
typ. 17
> 50
typ. 65
3.0
j4.0
6.3
+ j9.8
46.4//46.4
175
12.5
25
6
typ. 15
typ. 60
3.0
j4.0
4.5
+ j3.3
100
Note
1. R1 included.
Ruggedness in class-B operation
The BLF244 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
Th =25 °C; Rth mb-h = 0.3 K/W; at rated load power.
Fig.9
Load power as a function of input power,
typical values.
Class-B operation; VDS = 28 V; IDQ =25mA;
f = 175 MHz; Th =25 °C; Rth mb-h = 0.3 K/W.
handbook, halfpage
02
30
10
20
1
MGP157
PL
(W)
PIN (W)
Fig.10 Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 28 V; IDQ =25mA;
f = 175 MHz; Th =25 °C; Rth mb-h = 0.3 K/W.
handbook, halfpage
0
20
10
0
100
50
0
10
20
30
MGP158
Gp
(dB)
Gp
PL (W)
ηD
(%)
ηD
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