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參數(shù)資料
| 型號： | 933816490215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 933816490215 |
1999 Apr 09
2
Philips Semiconductors
Product specication
PNP general purpose transistor
PMBTA56
FEATURES
High current (max. 500 mA)
Low voltage (max. 80 V).
APPLICATIONS
General purpose switching and amplification, e.g.
telephony and professional communication equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: PMBTA06.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
PMBTA56
2G
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
80
V
VCEO
collector-emitter voltage
open base
80
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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