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參數(shù)資料
| 型號(hào)： | 933816480215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 933816480215 |
2002 Nov 07
3
Philips Semiconductors
Product specication
PNP Darlington transistor
PMBTA64
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
100
nA
IEBO
emitter cut-off current
IC = 0; VEB = 10 V;
100
nA
hFE
DC current gain
IC = 10 mA; VCE = 5 V; (see Fig.2)
10000
IC = 100 mA; VCE = 5 V; (see Fig.2) 20000
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEon
base-emitter on-state voltage
IC = 100 mA; VCE = 5V
2V
fT
transition frequency
IC = 50 mA; VCE = 5 V; f = 100 MHz 125
MHz
Fig.2 DC gain current; typical values.
handbook, full pagewidth
0
100000
20000
40000
60000
80000
hFE
MGD836
1
10
IC (mA)
102
103
VCE = 2V.
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