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參數(shù)資料
| 型號(hào)： | 933769900215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 11/16頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | 933769900215 |
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2003 Apr 09
4
Philips Semiconductors
Product specication
PNP general purpose transistors
BC856; BC857; BC858
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 30 V; IE =0
1
15
nA
VCB = 30 V; IE =0;
Tj = 150 °C
4
A
IEBO
emitter-base cut-off current
VEB = 5 V; IC =0
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 5V
BC856
125
475
BC857
125
800
BC856A; BC857A
125
250
BC856B; BC857B; BC858B
220
475
BC857C
420
800
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA 75
300
mV
IC = 100 mA; IB = 5 mA;
note 1
250
650
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA 700
mV
IC = 100 mA; IB = 5 mA;
note 1
850
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5V
600
650
750
mV
IC = 10 mA; VCE = 5V
820
mV
Cc
collector capacitance
VCB = 10 V; IE =Ie =0;
f = 1 MHz
4.5
pF
fT
transition frequency
VCE = 5 V; IC = 10 mA;
f = 100 MHz
100
MHz
F
noise gure
IC = 200 A; VCE = 5V;
RS =2k; f = 1 kHz;
B = 200 Hz
210
dB
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