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參數(shù)資料
| 型號(hào)： | 933658480133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 933658480133 |
1996 May 14
6
Philips Semiconductors
Product specication
Voltage regulator diodes
BZW03 series
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8” (10/1000
s pulse); see Fig.7.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.6.
For more information please refer to the
“General Part of associated Handbook”.
BZW03-C180
168
0.09
0.13
5
249
2.0
10
150
BZW03-C200
188
0.09
0.13
5
276
1.8
10
160
BZW03-C220
208
0.09
0.13
5
305
1.6
10
180
BZW03-C240
228
0.09
0.13
5
336
1.5
10
200
BZW03-C270
251
0.09
0.13
5
380
1.3
10
220
BZW03-C300
280
0.09
0.13
5
419
1.2
10
240
BZW03-C330
310
0.09
0.13
5
459
1.1
10
270
BZW03-C360
340
0.09
0.13
5
498
1.0
10
300
BZW03-C390
370
0.09
0.13
5
537
0.93
10
330
BZW03-C430
400
0.09
0.13
5
603
0.83
10
360
BZW03-C470
440
0.09
0.13
5
655
0.76
10
390
BZW03-C510
480
0.09
0.13
5
707
0.71
10
430
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
V(BR)R (V)
at Itest
SZ (%/K) at Itest
Itest
(mA)
V(CL)R
(V)
at IRSM
(A)
note 1
IR (A)
at VR
(V)
MIN.
MAX.
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