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參數(shù)資料
| 型號(hào)： | 933658290133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 933658290133 |
1996 May 14
2
Philips Semiconductors
Product specication
Voltage regulator diodes
BZW03 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Zener working voltage range:
7.5 to 270 V for 38 types
Transient suppressor stand-off
voltage range:
6.2 to 430 V for 45 types
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM205
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Ptot
total power dissipation
Ttp =25 °C; lead length 10 mm; see Fig.2
6.00
W
Tamb =45 °C; see Fig.2;
PCB mounted (see Fig.6)
1.75
W
PZRM
repetitive peak reverse power
dissipation
20
W
PZSM
non-repetitive peak reverse
power dissipation
tp = 100 s; square pulse;
Tj =25 °C prior to surge; see Fig.3
1000
W
PRSM
non-repetitive peak reverse
power dissipation
10/1000
s exponential pulse (see Fig.7);
Tj =25 °C prior to surge; see Fig.4
500
W
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
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