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參數(shù)資料
| 型號(hào)： | 933628620215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 933628620215 |
1999 Jun 01
3
Philips Semiconductors
Product specication
NPN general purpose transistor
BC817
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
2. VBE decreases by approx. 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
100
nA
IE = 0; VCB = 20 V; Tj = 150 °C
5
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC = 100 mA; VCE = 1 V; note 1;
see Figs 2, 3 and 4
BC817
100
600
BC817-16
100
250
BC817-25
160
400
BC817-40
250
600
hFE
DC current gain
IC = 500 mA; VCE = 1 V; note 1
40
VCEsat
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
700
mV
VBE
base-emitter voltage
IC = 500 mA; VCE = 1 V; note 2
1.2
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz;
5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz;
100
MHz
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