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參數(shù)資料
| 型號(hào)： | 933589720215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 170K |
| 代理商： | 933589720215 |
2003 Apr 09
3
Philips Semiconductors
Product specication
PNP general purpose transistors
BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC856
80
V
BC857
50
V
BC858
30
V
VCEO
collector-emitter voltage
open base
BC856
65
V
BC857
45
V
BC858
30
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
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