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參數(shù)資料
| 型號： | 933500190163 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.8 A, 1000 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 54K |
| 代理商： | 933500190163 |
1996 Jun 07
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYV96 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high temperature alloyed construction. This
package is hermetically sealed and fatigue free as coefficients of expansion
of all used parts are matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYV96D
800
V
BYV96E
1000
V
VR
continuous reverse voltage
BYV96D
800
V
BYV96E
1000
V
IF(AV)
average forward current
Ttp =55 °C; lead length = 10 mm
see Fig 2;
averaged over any 20 ms period;
see also Fig 6
1.5
A
Tamb =55 °C; PCB mounting (see
Fig.11); see Fig 3;
averaged over any 20 ms period;
see also Fig 6
0.8
A
IFRM
repetitive peak forward current
Ttp =55 °C; see Fig 4
17
A
Tamb =55 °C; see Fig 5
9A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
35
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig 7
65
+175
°C
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