參數(shù)資料
型號(hào)： 933387740127
廠商： NXP SEMICONDUCTORS
元件分類： 晶閘管
英文描述： 9 A, 800 V, SCR, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 37K
代理商： 933387740127
Philips Semiconductors
Product specification
Thyristors
BT151 series
Fig.1. Maximum on-state dissipation, P
tot, versus
average on-state current, I
T(AV), where
a = form factor = I
T(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS) ,
versus mounting base temperature T
mb.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb ≤ 109C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25C), versus junction temperature Tj.
0
1
2
345
67
8
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
IT(AV) / A
Ptot / W
Tmb(max) / C
125
118.5
112
105.5
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1
10
100
1000
0
20
40
60
80
100
120
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
10
100
1000
10us
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
5
10
15
BT151
Tmb / C
IT(RMS) / A
109 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
June 1999
3
Rev 1.300
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933387880127 12 A, 500 V, SCR, TO-220AB
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