參數(shù)資料
型號: 933363630133
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.8 A, 1000 V, SILICON, SIGNAL DIODE
文件頁數(shù): 3/9頁
文件大小: 81K
代理商: 933363630133
1996 Oct 03
3
Philips Semiconductors
Product specication
Controlled avalanche rectiers
BYW54 to BYW56
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF =1A; Tj =Tj max; see Fig.6
0.8
V
IF = 1 A; see Fig.6
1.0
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYW54
650
V
BYW55
900
V
BYW56
1100
V
IR
reverse current
VR =VRRMmax; see Fig.7
1
A
VR =VRRMmax; Tj = 165 °C;
see Fig.7
150
A
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.10
3
s
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.8
50
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
相關(guān)PDF資料
PDF描述
933363620133 0.8 A, 800 V, SILICON, SIGNAL DIODE
933363620113 0.8 A, 800 V, SILICON, SIGNAL DIODE
933363610113 0.8 A, 600 V, SILICON, SIGNAL DIODE
933363630163 0.8 A, 1000 V, SILICON, SIGNAL DIODE
933372900652 PHASE LOCKED LOOP, PDSO16
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