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參數(shù)資料
| 型號： | 8AF8RLVPBF |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 50 A, 800 V, SILICON, RECTIFIER DIODE |
| 封裝： | B-47, 1 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 136K |
| 代理商： | 8AF8RLVPBF |
8AF Series
2
Bulletin I20262 Rev.A 06/03
www.irf.com
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
V
RRM , maximum repetitive
V
RSM , maximum non-
I
RRM max.
Typenumber
Code
peakreversevoltage
repetitive peak rev. voltage
@ T
J = 150°C
VV
mA
1
100
150
5
2
200
300
5
4
400
500
5
8
800
900
5
8AF
I
F(AV)
Maximum average forward current
50
A
180° conduction, half sine wave
@ Case temperature
150
°C
I
F(RMS)
Maximum RMS forward current
79
A
I
FSM
Maximum peak, one-cycle forward,
714
A
t = 10ms
No voltage
non-repetitive surge current
747
t = 8.3ms reapplied
600
t = 10ms
100% V
RRM
628
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
2546
A2s
t = 10ms
No voltage Initial T
J = TJ max.
2324
t = 8.3ms reapplied
1800
t = 10ms
100% V
RRM
1643
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
25455
A2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold voltage
0.60
V
(16.7% x π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
VF(TO)2 High level value of threshold voltage
0.68
(π x IF(AV) < I < 20 x π x IF(AV)), TJ = TJ max.
rf1
Low level value of forward slope resistance
6.66
m
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rf2
High level value of forward slope resistance
6.25
(π x IF(AV) < I < 20 x π x IF(AV)), TJ = TJ max.
V
FM
Maximum forward voltage drop
1.45
V
T
J = 25°C, IFM = π x rated IF(AV)
Parameter
8AF
Units Conditions
Forward Conduction
T
J
Max. junction operating temperature range
- 65 to 195
°C
Tstg
Storage temperature range
- 65 to 195
RthJC Max. thermal resistance, junction to case
0.60
K/W
DC operation
RthCS Typical thermal resistance, case to heatsink
0.50
As per mounting details
wt
Approximate weight
10 (0.36)
g (oz)
Case style
B-47
See outline table
Parameter
8AF
Units Conditions
Thermal and Mechanical Specifications
MOUNTING: A 12.6 ± 0.02mm (0.496 to 0.497 inch) diameter hole should be drilled in heatsink, the leading edge chamfered to 0.038mm (0.015
inch) x 45°. The diode should then be press fitted, ensuring that the sides of the diode are kept parallel to the sides of the hole.
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| 8AF8RPP | 功能描述:整流器 50 Amp 800 Volt 747 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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| 8AG0.500 | 制造商:Ferraz Shawmut 功能描述: |
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