參數(shù)資料
型號(hào): 74LVXT4066
廠商: ON SEMICONDUCTOR
英文描述: Quad Analog Switch/Multiplexer/Demultiplexer High−Performance Silicon−Gate CMOS
文件頁數(shù): 4/12頁
文件大?。?/td> 184K
代理商: 74LVXT4066
MC74LVXT4066
http://onsemi.com
4
DC ELECTRICAL CHARACTERISTICS
Analog Section
(Voltages Referenced to GND)
) approaching 2 V the analog switchon resistance becomes extremely nonlinear. Therefore, for lowvoltage
operation, it is recommended that these devices only be used to control digital signals.
Symbol
Parameter
on
Maximum “ON” Resistance
– 55 to
25 C
125 C
Test Conditions
V
in
IH
V
I
S
2.0 mA (Figures 1, 2)
V
V
85 C
28
Unit
Resistance Between Any Two
V
IS
= 1/2 (V
CC
GND)
S
V
in
IL
V
Switch Off (Figure 3)
4.5
25
35
4.5
V
I
S
2.0 mA (Figures 1, 2)
10
4.5
12
25
15
28
35
(Figure 4)
Maximum Difference in “ON”
off
Maximum OffChannel Leakage
Current, Any One Channel
A
A
I
on
Maximum OnChannel Leakage
Current, Any One Channel
V
= V
V
IS
= V
CC
or GND
5.5
0.1
0.5
1.0
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, ON/OFF Control Inputs: t
r
= t
f
= 6 ns)
Symbol
Parameter
V
Typical @ 25
°
C, V
CC
= 5.0 V
15
Guaranteed Limit
85 C
Unit
4.5
5.5
1.0
1.0
– 55 to 25 C
2.0
2.0
125 C
pF
t
PLH
,
Maximum Propagation Delay, Analog Input to Analog Output
2.0
3.0
15
4.5
4.0
6.0
2.0
2.0
22
8.0
PLZ
Maximum Propagation Delay, ON/OFF Control to Analog Output
(Figures 10 and 11)
2.0
3.0
18
PZL
Maximum Propagation Delay, ON/OFF Control to Analog Output
(Figures 10 and 1 1)
2.0
3.0
4.5
8.0
10
12
Analog I/O
35
35
35
C
PD
Power Dissipation Capacitance (Per Switch) (Figure 13)*
* Used to determine the noload dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
.
pF
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