參數(shù)資料
型號： 74LVU04PWDH
廠商： NXP SEMICONDUCTORS
元件分類： 通用總線功能
英文描述： CERAMIC CHIP/MIL-PRF-55681
中文描述： LV/LV-A/LVX/H SERIES, HEX 1-INPUT INVERT GATE, PDSO14
封裝： PLASTIC, SOT-402-1, TSSOP1-14
文件頁數(shù)： 4/14頁
文件大小： 127K
代理商： 74LVU04PWDH
Philips Semiconductors
Product specification
74LVU04
Hex inverter
1998 Apr 20
4
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
PARAMETER
V
CC
DC supply voltage
I
IK
DC input diode current
I
OK
DC output diode current
DC output source or sink current
– standard outputs
CONDITIONS
RATING
–0.5 to +7.0
20
50
UNIT
V
mA
mA
V
I
< –0.5 or V
I
> V
CC
+ 0.5V
V
O
< –0.5 or V
O
> V
CC
+ 0.5V
I
O
–0.5V < V
O
< V
CC
+ 0.5V
25
mA
I
GND
,
CC
T
stg
DC V
or GND current for types with
– standard outputs
50
mA
Storage temperature range
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
–65 to +150
°
C
P
TOT
for temperature range: –40 to +125
°
C
above +70
°
C derate linearly with 12 mW/K
above +70
°
C derate linearly with 8 mW/K
above +60
°
C derate linearly with 5.5 mW/K
750
500
400
mW
NOTE:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
-40
°
C to +85
°
C
TYP
1
-40
°
C to +125
°
C
MIN
1.0
UNIT
MIN
1.0
MAX
MAX
V
CC
= 1.2V
V
CC
= 2.0V
V
CC
= 2.7 to 3.6V
V
CC
= 4.5 to 5.5V
V
CC
= 1.2V
V
CC
= 2.0V
V
CC
= 2.7 to 3.6V
V
CC
= 4.5 to 5.5
V
CC
= 1.2V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 2.0V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 2.7V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 4.5V;V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 3.0V;V
I
= V
IH
or V
IL;
–I
O
= 6mA
V
CC
= 4.5V;V
I
= V
IH
or V
IL;
–I
O
= 12mA
V
CC
= 1.2V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 2.0V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 2.7V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 3.0V;V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 4.5V;V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
IH
HIGH level Input
voltage
1.6
1.6
V
2.4
2.4
0.8
V
CC
0.8
V
CC
0.2
0.2
V
IL
LOW level Input
voltage
0.4
0.4
V
0.5
0.5
0.2
V
CC
0.2
V
CC
1.2
HIGH level
voltage
t
t
1.8
2.0
1.8
V
OH
2.5
2.7
2.5
V
2.8
3.0
2.8
4.3
4.5
4.3
V
OH
HIGH level output
voltage
2.40
2.82
2.20
V
3.60
4.20
3.50
0
LOW level
voltage
t
t
0
0.2
0.2
V
OL
0
0.2
0.2
V
0
0
0.2
0.2
0.2
0.2
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