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參數(shù)資料
| 型號： | 74LVC273PWDH |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通用總線功能 |
| 英文描述： | Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 |
| 中文描述： | LVC/LCX/Z SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PDSO20 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 95K |
| 代理商： | 74LVC273PWDH |
Philips Semiconductors
Product specification
74LVC273
Octal D-type flip-flop with reset; positive-edge trigger
1998 May 20
4
ABSOLUTE MAXIMUM RATINGS
1
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0V)
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
I
IK
V
I
I
OK
V
O
I
O
DC supply voltage
–0.5 to +6.5
V
DC input diode current
V
I
Note 2
0
–50
mA
DC input voltage
–0.5 to +5.5
V
DC output diode current
V
O
Note 2
V
CC
or V
O
0
50
mA
DC output voltage
–0.5 to V
CC
+0.5
50
V
DC output source or sink current
V
O
= 0 to V
CC
mA
I
GND
, I
CC
T
stg
DC V
CC
or GND current
Storage temperature range
100
mA
–65 to +150
°
C
Power dissipation per package
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and
TSSOP)
P
TOT
above +70
°
C derate linearly with 8 mW/K
500
above +60
°
C derate linearly with 5.5 mW/K
500
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions voltages are referenced to GND (ground = 0V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
°
C to +85
°
C
UNIT
MIN
TYP
1
MAX
V
IH
HIGH level Input voltage
V
CC
= 1.2V
V
CC
V
V
CC
= 2.7 to 3.6V
2.0
V
IL
LOW level Input voltage
V
CC
= 1.2V
GND
V
V
CC
= 2.7 to 3.6V
0.8
V
CC
= 2.7V; V
I
= V
IH
or V
IL
; I
O
= –12mA
V
CC
0.5
V
OH
HIGH level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL
; I
O
= –100
μ
A
V
CC
0.2
V
CC
V
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= –12mA
V
CC
0.6
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= –24mA
V
CC
1.0
V
CC
= 2.7V; V
I
= V
IH
or V
IL
; I
O
= 12mA
0.40
V
OL
LOW level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL
; I
O
= 100
μ
A
0.20
V
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 24mA
0.55
I
I
Input leakage current
V
CC
= 3 6V; V = 5 5V or GND
I
= 5.5V or GND
0 1
0.1
5
μ
A
I
OZ
3-State output OFF-state current
V
CC
= 3.6V; V
I
= V
IH
or V
IL
; V
O
= V
CC
or GND
0.1
10
μ
A
I
CC
Quiescent supply current
V
CC
= 3.6V; V
I
= V
CC
or GND; I
O
= 0
0.1
10
μ
A
I
CC
Additional quiescent supply current
V
CC
= 2.7V to 3.6V; V
I
= V
CC
–0.6V; I
O
= 0
5
500
μ
A
NOTE:
1. All typical values are at V
CC
= 3.3V and T
amb
= 25
°
C.
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