參數(shù)資料
型號: 74HCT574PW,112
廠商: NXP Semiconductors
文件頁數(shù): 14/19頁
文件大小: 0K
描述: IC OCT FF POS-EDGE TRIG 20TSSOP
產(chǎn)品培訓(xùn)模塊: Logic Packages
標(biāo)準(zhǔn)包裝: 1,875
系列: 74HCT
功能: 標(biāo)準(zhǔn)
類型: D 型總線
輸出類型: 三態(tài)非反相
元件數(shù): 1
每個元件的位元數(shù): 8
頻率 - 時鐘: 69MHz
延遲時間 - 傳輸: 18ns
觸發(fā)器類型: 正邊沿
電源電壓: 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)
包裝: 管件
74HC_HCT574
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 25 April 2012
4 of 19
NXP Semiconductors
74HC574; 74HCT574
Octal D-type flip-flop; positive edge-trigger; 3-state
5.2 Pin description
6.
Functional description
[1]
H = HIGH voltage level;
h = HIGH voltage level one setup time prior to the HIGH-to-LOW CP transition;
L = LOW voltage level;
l = LOW voltage level one setup time prior to the HIGH-to-LOW CP transition;
Z = high-impedance OFF-state;
↑ = LOW-to-HIGH clock transition.
7.
Limiting values
[1]
For DIP20 package: Ptot derates linearly with 12 mW/K above 70
°C.
[2]
For SO20: Ptot derates linearly with 8 mW/K above 70
°C.
For SSOP20 and TSSOP20 packages: Ptot derates linearly with 5.5 mW/K above 60
°C.
Table 2.
Pin description
Symbol
Pin
Description
OE
1
3-state output enable input (active LOW)
D[0:7]
2, 3, 4, 5, 6, 7, 8, 9
data input
GND
10
ground (0 V)
CP
11
clock input (LOW-to-HIGH, edge triggered)
Q[0:7]
19, 18, 17, 16, 15, 14, 13, 12 3-state flip-flop output
VCC
20
supply voltage
Table 3.
Function table[1]
Operating mode
Input
Internal
flip-flop
Output
OE
CP
Dn
Qn
Load and read register
L
lL
L
hH
H
Load register and disable output
H
lL
Z
H
hH
Z
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+7
V
IIK
input clamping current
VI <
0.5 V or VI >VCC +0.5 V
-
±20
mA
IOK
output clamping current
VO <
0.5 V or VO >VCC +0.5 V
-
±20
mA
IO
output current
VO =
0.5 V to (VCC +0.5 V)
-
±35
mA
ICC
supply current
-
+70
mA
IGND
ground current
-
70
mA
Tstg
storage temperature
65
+150
°C
Ptot
total power dissipation
DIP20 package
750
mW
SO20, SSOP20 and TSSOP20 packages
500
mW
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