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參數(shù)資料
| 型號(hào)： | 74HCT1G126 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Bus buffer/line driver; 3-state |
| 中文描述： | 總線緩沖器/線路驅(qū)動(dòng)器，三態(tài) |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 74HCT1G126 |
2002 May 15
4
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G126; 74HCT1G126
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
notes 1 and 2.
Notes
1.
Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
°
C the value of P
D
derates linearly with 2.5 mW/K.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
74HC1G
74HCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
V
I
V
O
T
amb
supply voltage
input voltage
output voltage
operating ambient
temperature
2.0
0
0
40
5.0
+25
6.0
V
CC
V
CC
+125
4.5
0
0
40
5.0
+25
5.5
V
CC
V
CC
+125
V
V
V
°
C
see DC and AC
characteristics per
device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
r
, t
f
input rise and fall times
1000
500
400
500
ns
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
0.5
65
MAX.
UNIT
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
supply voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
+7.0
±
20
±
20
±
35.0
±
70
+150
200
V
mA
mA
mA
mA
°
C
mW
V
I
<
0.5 V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5 V or V
O
> V
CC
+ 0.5 V
0.5 V < V
O
< V
CC
+ 0.5 V
for temperature range from
40 to +125
°
C;
note 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 74HC1G00 | 2-input NAND gate |
| 74HCT1G00 | 2-input NAND gate |
| 74HCT1G02 | 2-input NOR gate |
| 74HCT1G04 | Inverter |
| 74HC1GU04 | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 22uF; Voltage: 50V; Case Size: 5x11 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 74HCT1G126GV,125 | 功能描述:緩沖器和線路驅(qū)動(dòng)器 3-STATE BUFFER RoHS:否 制造商:Micrel 輸入線路數(shù)量:1 輸出線路數(shù)量:2 極性:Non-Inverting 電源電壓-最大:+/- 5.5 V 電源電壓-最小:+/- 2.37 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Reel |
| 74HCT1G126GW,125 | 功能描述:緩沖器和線路驅(qū)動(dòng)器 BUS BFR/LINE DRV;3-S RoHS:否 制造商:Micrel 輸入線路數(shù)量:1 輸出線路數(shù)量:2 極性:Non-Inverting 電源電壓-最大:+/- 5.5 V 電源電壓-最小:+/- 2.37 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Reel |
| 74HCT1G126GW,165 | 功能描述:緩沖器和線路驅(qū)動(dòng)器 BUS BUF/LINE 3-STATE RoHS:否 制造商:Micrel 輸入線路數(shù)量:1 輸出線路數(shù)量:2 極性:Non-Inverting 電源電壓-最大:+/- 5.5 V 電源電壓-最小:+/- 2.37 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Reel |
| 74HCT1G126GW125 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| 74HCT1G126GW-G | 功能描述:緩沖器和線路驅(qū)動(dòng)器 BUS BFR/LINE DRV;3-S RoHS:否 制造商:Micrel 輸入線路數(shù)量:1 輸出線路數(shù)量:2 極性:Non-Inverting 電源電壓-最大:+/- 5.5 V 電源電壓-最小:+/- 2.37 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Reel |
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