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參數(shù)資料
| 型號(hào)： | 74HC1G66GW-G |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | SPST模擬開關(guān) |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 78K |
| 代理商： | 74HC1G66GW-G |
2002 May 15
4
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G126; 74HCT1G126
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
notes 1 and 2.
Notes
1.
Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
°
C the value of P
D
derates linearly with 2.5 mW/K.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
74HC1G
74HCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
V
I
V
O
T
amb
supply voltage
input voltage
output voltage
operating ambient
temperature
2.0
0
0
40
5.0
+25
6.0
V
CC
V
CC
+125
4.5
0
0
40
5.0
+25
5.5
V
CC
V
CC
+125
V
V
V
°
C
see DC and AC
characteristics per
device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
r
, t
f
input rise and fall times
1000
500
400
500
ns
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
0.5
65
MAX.
UNIT
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
supply voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
+7.0
±
20
±
20
±
35.0
±
70
+150
200
V
mA
mA
mA
mA
°
C
mW
V
I
<
0.5 V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5 V or V
O
> V
CC
+ 0.5 V
0.5 V < V
O
< V
CC
+ 0.5 V
for temperature range from
40 to +125
°
C;
note 3
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