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參數(shù)資料
| 型號： | 72299 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 30-V (D-S) MOSFET |
| 中文描述： | 雙P溝道30V的（D-S）MOSFET |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 228K |
| 代理商： | 72299 |
Vishay Siliconix
www.vishay.com
2
Document Number: 72299
20-May-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250
μ
A
2.1
V
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
10 V
234
A
V
GS
=
10 V, I
D
=
7.3 A
0.020
0.020
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
4.5 V, I
D
=
5.6 A
0.035
0.033
Forward Transconductance
a
g
fs
V
DS
=
10 V, I
D
=
7.3 A
18
16
S
Diode Forward Voltage
a
Dynamic
b
V
SD
I
S
=
1.7 A, V
GS
= 0 V
0.80
0.80
V
Total Gate Charge
Q
g
32
33
Gate-Source Charge
Q
gs
5.8
5.8
Gate-Drain Charge
Q
gd
V
DS
=
15 V, V
GS
=
105 V, I
D
=
7.34 A
8.6
8.6
nC
Turn-On Delay Time
t
d(on)
20
10
Rise Time
t
r
15
15
Turn-Off Delay Time
t
d(off)
178
110
Fall Time
t
f
V
DD
=
15 V, R
L
= 15
I
D
1 A, V
GEN
=
10 V, R
G
= 6
34
70
Source-Drain Reverse Recovery Time
t
rr
I
F
=
1.7 A, di/dt – 100 A/
μ
s
55
60
ns
Notes
a. Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
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