參數(shù)資料
型號(hào)： 72173
廠商： Vishay Intertechnology,Inc.
英文描述： Complementary 30-V (D-S) MOSFET
中文描述： 補(bǔ)充30 V的（副）MOSFET的
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 87K
代理商： 72173
Si7501DN
Vishay Siliconix
www.vishay.com
2
Document Number: 72173
S-32419—Rev. B, 24-Nov-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
P-Ch
1.0
3
V
V
DS
= V
GS
, I
D
= 250 A
N-Ch
1.0
3
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
25 V
P-Ch
200
nA
V
DS
= 0 V, V
GS
=
20 V
N-Ch
100
V
DS
=
30 V, V
GS
= 0 V
P-Ch
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
N-Ch
1
A
V
DS
=
30 V, V
GS
= 0 V, T
J
= 55 C
P-Ch
5
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 C
N-Ch
5
On State Drain Current
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
=
10 V
P-Ch
25
A
V
DS
5 V, V
GS
= 10 V
N-Ch
25
V
GS
=
10 V, I
D
=
6.4 A
P-Ch
0.041
0.051
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 7.7 A
N-Ch
0.028
0.035
V
GS
=
6 V, I
D
=
5.3 A
P-Ch
0.055
0.075
V
GS
= 4.5 V, I
D
= 6.5 A
N-Ch
0.040
0.050
Forward Transconductance
a
g
fs
V
DS
=
15 V, I
D
=
6.4 A
P-Ch
13
S
V
DS
= 15 V, I
D
= 7.7 A
N-Ch
15
Diode Forward Voltage
a
V
SD
I
S
=
1.7 A, V
GS
= 0 V
P-Ch
0.80
1.2
V
I
S
= 1.7 A, V
GS
= 0 V
N-Ch
0.80
1.2
Dynamic
b
Total Gate Charge
Q
g
P-Ch
12.5
19
P-Channel
N-Ch
9
14
Gate Source Charge
Gate-Source Charge
Q
gs
V
DS
=
15 V,
V
GS
=
10 V, I
D
=
6.4 A
P-Ch
2.5
nC
N-Channel
10 V I 7 7 A
V
DS
= 15 V,
GS
= 10 V, I
= 7.7 A
15 V
V
N-Ch
2
Gate Drain Charge
Gate-Drain Charge
Q
gd
P-Ch
3.6
N-Ch
1.3
Gate Resistance
R
g
P-Ch
9
N-Ch
3
Turn On Delay Time
Turn-On Delay Time
t
d(on)
P-Ch
10
15
N-Ch
10
15
Rise Time
t
r
P-Channel
V
=
15 V, R
= 5
3 A, V
GEN
=
10 V, R
G
= 1
P-Ch
20
30
I
D
N-Ch
15
25
Turn Off Delay Time
Turn-Off Delay Time
d( ff)
t
d(off)
N-Channel
15 V R 5
= 15 V, R
= 5
3 A, V
GEN
= 10 V, R
G
= 1
V
P-Ch
25
40
ns
I
D
N-Ch
20
30
Fall Time
t
f
P-Ch
30
45
N-Ch
10
15
Source-Drain
Reverse Recovery Time
t
rr
I
F
=
1.7 A, di/dt = 100 A/ s
P-Ch
25
50
I
F
= 1.7 A, di/dt = 100 A/ s
N-Ch
20
40
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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