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參數(shù)資料
| 型號(hào)： | 72021 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | 72021 |
Si4830ADY
Vishay Siliconix
www.vishay.com
2
Document Number: 72021
S-32621—Rev. D, 29-Dec-03
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
0.8
3.0
V
Gate-Body Leakage
20 V
100
nA
= 30 V V
V
DS
= 30 V, V
GS
= 0 V
Ch-1
1
Zero Gate Voltage Drain Current
I
DSS
Ch-2
100
A
= 30 V V
= 0 V T
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 C
Ch-1
15
Ch-2
2000
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 4.5 V, I
D
= 6.5 A
V
DS
= 15 V, I
D
= 7.5 A
20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
0.017
0.022
0.024
0.030
Forward Transconductance
b
g
fs
19
S
Diode Forward Voltage
b
V
SD
= 1 A V
I
S
= 1 A, V
GS
= 0 V
Ch-1
0.75
1.2
V
Ch-2
0.47
0.5
Dynamic
a
Total Gate Charge
Q
g
Q
gs
Q
gd
7
11
Gate-Source Charge
V
= 15 V,
V
= 4.5 V, I
= 7.5 A
DS
GS
2.9
nC
Gate-Drain Charge
D
2.5
Gate Resistance
R
g
0.5
1.5
2.4
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
9
15
Rise Time
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
g
= 6
10
17
Turn-Off Delay Time
I
D
19
30
ns
Fall Time
9
15
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
t
rr
= 1 7 A di/dt = 100 A/ s
I
F
= 1.7 A, di/dt = 100 A/ s
Ch-1
35
55
Ch-2
32
55
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47
0.50
V
I
F
= 1.0 A, T
J
= 125 C
V
r
= 30 V
V
r
= 30 V, T
J
= 100 C
V
r
=
30 V, T
J
= 125 C
V
r
= 10 V
0.36
0.42
0.004
0.100
Maximum Reverse Leakage Current
I
rm
0.7
10
mA
3.0
20
Junction Capacitance
C
T
50
pF
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