- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄357460 > 71124S15YG8 (INTEGRATED DEVICE TECHNOLOGY INC) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 PDF資料下載
參數(shù)資料
| 型號(hào)： | 71124S15YG8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 15 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-32 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | 71124S15YG8 |
6.42
IDT71124 CMOS Static RAM
1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 1 (
WE
Controlled Timing
)
(1,2,4)
Timing Waveform of Write Cycle No. 2 (
CS
Controlled Timing)
(1,4)
NOTES:
1. A write occurs during the overlap of a LOW
CS
and a LOW
WE
.
2.
OE
is continuously HIGH. During a
WE
controlled write cycle with
OE
LOW, t
WP
must be greater than or equal to t
WHZ
+ t
DW
to allow the I/O drivers to turn off and data to be placed
on the bus for the required t
DW
. If
OE
is HIGH during a
WE
controlled write cycle, this requirement does not apply and the mnimumwrite pulse is the specified t
WP
.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the
CS
LOW transition occurs simultaneously with or after the
WE
LOW transition, the outputs remain in a high impedance state.
CS
must be active during the t
CW
write period.
5. Transition is measured ±200mV fromsteady state.
ADDRESS
CS
WE
DATA
OUT
DATA
IN
3514 drw 07
(5)
(2)
(5)
(5)
DATA
IN
VALID
HIGH IMPEDANCE
t
WC
t
AW
t
AS
t
WHZ
t
WP
t
CHZ
t
OW
t
DW
t
DH
t
WR
(3)
(3)
.
CS
ADDRESS
DATA
IN
3514 drw 08
t
AW
t
WC
t
CW
t
AS
t
WR
t
DW
t
DH
DATA
IN
VALID
WE
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 71124S15Y | 128K X 8 STANDARD SRAM, 15 ns, PDSO32 |
| 71221-002 | PCB ADAPTER |
| 71221-003 | PCB ADAPTER |
| 71221-004 | PCB ADAPTER |
| 71221-005 | PCB ADAPTER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 71124S15YGI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71124S15YGI8 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71124S15YI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 15ns 32-Pin SOJ Tube 制造商:IDT from Components Direct 功能描述:1MBIT SRAM CHIP ASYNC SINGLE 5V 128K X 8 15NS 32-PIN SOJ - Trays 制造商:IDT 功能描述:IDT 71124S15YI, 1MBit SRAM Chip Async Single 5V 128K x 8 15ns 32-Pin SOJ |
| 71124S15YI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 15ns 32-Pin SOJ T/R |
| 71124S20YG | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。