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參數(shù)資料
| 型號： | 70V658S10BC |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 64K X 36 DUAL-PORT SRAM, 10 ns, PBGA256 |
| 封裝： | 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 |
| 文件頁數(shù)： | 16/24頁 |
| 文件大?。?/td> | 316K |
| 代理商： | 70V658S10BC |
23
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Identification Register Definitions
Instruction Field
Value
Description
Revision Number (31:28)
0x0
Reserved for version number
IDT Device ID (27:12)
0x303(1)
Defines IDT part number
IDT JEDEC ID (11:1)
0x33
Allows unique identification of device vendor as IDT
ID Register Indicator Bit (Bit 0)
1
Indicates the presence of an ID register
4869 tbl 20
Scan Register Sizes
Register Name
Bit Size
Instruction (IR)
4
Bypass (BYR)
1
Identification (IDR)
32
Boundary Scan (BSR)
Note (3)
4869 tbl 21
System Interface Parameters
Instruction
Code
Description
EXTEST
0000
Forces contents of the boundary scan cells onto the device outputs(1).
Places the boundary scan register (BSR) between TDI and TDO.
BYPASS
1111
Places the bypass register (BYR) between TDI and TDO.
IDCODE
0010
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
HIGHZ
0100
Places the bypass register (BYR) between TDI and TDO. Forces all
device output drivers to a High-Z state.
CLAMP
0011
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the bypass register (BYR) between TDI and TDO.
SAMPLE/PRELOAD
0001
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data from device inputs(2) and outputs(1) to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the boundary scan cells via the TDI.
RESERVED
All other codes
Several combinations are reserved. Do not use codes other than those
identified above.
4869 tbl 22
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST.
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local
IDT sales representative.
NOTE:
1. Device ID for IDT70V658 is 0x30B. Device ID for IDT70V657 is 0x323.
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| 70V658S10BC8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 3.3V 2.25M-Bit 64K x 36 10ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 2.25MBIT 64KX36 10NS 256BGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:64Kx36 STD-PWR, 3.3V DUAL-PORT RAM |
| 70V658S10BCG | 功能描述:靜態(tài)隨機存取存儲器 64Kx36 STD-PWR, 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 70V658S10BF | 功能描述:靜態(tài)隨機存取存儲器 64Kx36 STD-PWR, 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 70V658S10BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 3.3V 2.25M-Bit 64K x 36 10ns 208-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 2.25MBIT 64KX36 10NS 208CABGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:64Kx36 STD-PWR, 3.3V DUAL-PORT RAM |
| 70V658S10BFG | 功能描述:靜態(tài)隨機存取存儲器 64Kx36 STD-PWR, 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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