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參數(shù)資料
| 型號： | 705 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR |
| 中文描述： | 120伏特高壓進步黨硅達林頓晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 705 |
FCX705
S E M IC O N D U C T O R S
ISSUE 4 - DECEMBER 2002
2
PARAMETER
SYMBOL
V ALUE
UNIT
Junction to Ambient (a)
R
θ
JA
125
°C/W
Junction to Ambient (b)
R
θ
JA
45
°C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
PARAMETER
SYMBOL
LIMIT PNP
UNIT
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-10
V
Peak Pulse Current
I
CM
-4
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
2.8
22
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.
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