參數(shù)資料
型號(hào)： 66138-002
廠商： MICROPAC INDUSTRIES INC
元件分類： 光電耦合器
英文描述： 1 CHANNEL LINEAR OUTPUT OPTOCOUPLER
封裝： HERMETIC SEALED, LCC-6
文件頁數(shù)： 2/3頁
文件大?。?/td> 54K
代理商： 66138-002
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
66138
SINGLE CHANNEL, HERMETIC 6 PIN LCC, ELECTRICALLY
SIMILAR TO 4N22, 4N23, 4N24, 4N47, 4N48, 4N49
09/23/03
ELECTRICAL CHARACTERISTICS
TA = 25
°C unless otherwise specified.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
NOTE
Input Diode Static Reverse Current
IR
100
A
VR = 2V
1
Input Diode Forward Voltage
(4N22-24)
-55
°C
(4N47-49)
-55
°C
(4N22-24)
+25
°C
(4N47-49)
+25
°C
(4N22-24) +100
°C
(4N47-49) +100
°C
VF
1
0.8
0.7
1.5
1.7
1.3
1.5
1.2
1.3
V
IF = 10mA
OUTPUT TRANSISTOR
TA = 25
°C unless otherwise specified.
Collector-Base Breakdown Voltage
(4N22-24)
(4N47-49)
V(BR)CBO
35
45
V
IC = 100
A, IB = 0, IF = 0
Collector-Emitter Breakdown Voltage (4N22-24)
(4N47-49)
V(BR)CEO
35
40
V
IC = 1mA, IB = 0, IF = 0
Emitter-Base Breakdown Voltage
(4N22-24)
(4N47-49)
V(BR)EBO
4
7
V
IC = 0mA, IE = 100
A, IF = 0
COUPLED CHARACTERISTICS
TA = 25
°C unless otherwise specified.
On State Collector Current
4N22
4N23
4N24
4N22
TA = +25°C
4N23
4N24
4N47
4N48
4N49
IC(ON)
0.15
0.2
0.4
2.5
6.0
10.0
0.5
1
2
-
5
10
mA
VCE = 5V, IB = 0, IF = 2mA
VCE = 5V, IB = 0, IF = 10mA
VCE = 5V, IB = 0, IF = 1mA
On State Collector Current
4N22
4N23
TA = -55°C
4N24
4N47
4N48
4N49
IC(ON)
1
2.5
4
0.7
1.4
2.8
mA
VCE = 5V, IB = 0, IF = 10mA
VCE = 5V, IB = 0, IF = 2mA
On State Collector Current
4N22
4N23
TA = +100°C
4N24
4N47
4N48
4N49
IC(ON)
1
2.5
4
0.5
1.0
2.0
mA
VCE = 5V, IB = 0, IF = 10mA
VCE = 5V, IB = 0, IF = 2mA
3
Off State Collector Current, TA = +25°C
IC(OFF)
100
nA
VCE = 20V, IB = 0, IF = 0mA
1
Off State Collector Current, TA = 100°C
IC(OFF)
100
A
VCE = 20V, IB = 0, IF = 0mA
1
Collector-Emitter Saturation Voltage
4N22
4N23
4N24
4N47
4N48
4N49
VCE(SAT)
0.3
V
IF = 20mA, IC = 2.5mA, IB = 0
IF = 20mA, IC = 5mA, IB = 0
IF = 20mA, IC = 10mA, IB = 0
IF = 2mA, IC = 0.5mA, IB = 0
IF = 2mA, IC = 1mA, IB = 0
IF = 2mA, IC = 2mA, IB = 0
Input to Output Resistance
RIO
10
11
VI-O = 1kV,
2
Input to Output Capacitance
CIO
2.5
5
pF
F=1MHz, VI-O = 0
Rise Time (Phototransistor Operation) 4N22-23
Or
4N24
Fall Time
4N47
4N48-49
tr
or
tf
10
15
20
25
s
VCC = 10V, IB = 0, IF = 5mA,
RL = 100
Rise Time (Photodiode Operation)
4N47-49
or
Fall Time
tr
or
tf
0.85
3
s
VCC = 10V, IE = 0, IF = 5mA,
RL = 100
NOTES:
1.
Parameter applies to all part numbers.
2.
These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
3.
This parameter measured using pulse techniques tw =100
s, duty cycle < 1%.
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Current, Low Level
IFL
0
100
A
Input Current, High Level
IFH
1
10
mA
Supply Voltage
VCC
5.0
20
V
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