參數(shù)資料
型號: 5962R9584505QXC
英文描述: x8 SRAM
中文描述: x8的SRAM
文件頁數(shù): 7/41頁
文件大?。?/td> 290K
代理商: 5962R9584505QXC
SIZE
A
5962-94663
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
7
DSCC FORM 2234
APR 97
TABLE IA. Electrical performance characteristics.
Limits
Test
Symbol
Test conditions 1/
-55
°
C
T
C
+125
°
C
4.5 V
V
DD
5.5 V
unless otherwise specified
Device
type
Group A
subgroups
Min
Max
Unit
Low level input voltage
V
IL1
All
1, 2, 3
0.8
01, 02
03, 04
05, 06
10, 11
1, 2, 3
0.8
Low level input voltage,
TCK only
V
IL2
07, 08
09
1, 2, 3
0.7
V
High level input voltage
V
IH
All
1, 2, 3
2.2
V
Low level input voltage
2/
V
ILC
All
1, 2, 3
0.3V
DD
V
High level input voltage
2/
V
IHC
All
1, 2, 3
0.7V
DD
V
I
OL
= 4.0 mA
0.4
Low level output
voltage
V
OL
Output loads
I
OL
= 1.0
μ
A 3/
I
OH
= 4.0 mA
All
1, 2, 3
0.05
V
2.4
High level output
voltage
V
OH
Output loads
I
OH
= 1.0
μ
A 3/
All
1, 2, 3
V
DD
-0.05
V
TTL driven
inputs
V
IN
= V
DD
or V
SS
-10
+10
V
IN
= V
DD
All
1, 2, 3
-10
+10
01, 02,
03, 04,
05, 06
10, 11
-900
-150
Input leakage current
I
IN
Inputs with
pull-up resistors
V
IN
= V
SS
07, 08,
09
1, 2, 3
-167
-27
μ
A
Three-state output
leakage current, TTL
loaded outputs,
single-drive buffer
I
OZ
V
O
= V
DD
or V
SS
All
1, 2, 3
-10
+10
μ
A
Short-circuit output
current, output loads
I
OS
4/ 5/
V
DD
= 5.5 V, V
O
= 0 V
V
DD
= 5.5 V, V
O
= V
DD
All
1, 2, 3
-100
+100
mA
Input capacitance
C
IN
All
4
45
Output capacitance
C
OUT
All
4
45
Bi-directional
capacitance 6/
C
IO
f = 1 MHz at 0 V
See 4.4.1c
All
4
45
pF
Standby operating
current
I
DDS
f = 24 MHz
All
1, 2, 3
40
mA
See footnotes at end of table.
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