參數(shù)資料
型號(hào): 5962F9961701QSC
廠商: INTERSIL CORP
元件分類: MOSFETs
英文描述: Radiation Hardened Full Bridge N-Channel FET Driver
中文描述: 0.4 A FULL BRDG BASED MOSFET DRIVER, CDFP20
封裝: CERAMIC, DFP-20
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 84K
代理商: 5962F9961701QSC
4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certication.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4760
m x 5660m (188 mils x 223 mils)
Thickness: 483
m ±25.4m (19 mils ±1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: Phosphorus Silicon Glass
Thickness: 8.0k
±1.0k
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
±2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
432
Metallization Mask Layout
HS-4080ARH
15
14
13
12
11
10
9
8
7
6
16
17
18
19
20
1
2
3
4
5
HS-4080ARH
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