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參數(shù)資料
| 型號： | 5962F9689104QXC |
| 廠商： | Aeroflex Inc. |
| 英文描述： | Radiation-Hardened 32K x 8 PROM |
| 中文描述： | 輻射加固32K的× 8胎膜早破 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 5962F9689104QXC |
3
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55
°
C < T
C
< +125
°
C)
SYMBOL
PARAMETER
Notes:
* Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019 at 1E6 rad(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 3.0mA/MHz.
SYMBOL
PARAMETER
LIMITS
UNITS
V
DD
Positive supply voltage
4.5 to 5.5
V
T
C
Case temperature range
-55 to +125
°
C
V
IN
DC input voltage
0 to V
DD
V
CONDITION
MINIMUM
MAXIMUM
UNIT
V
IH
High-level input voltage
(TTL)
2.4
V
V
IL
Low-level input voltage
(TTL)
0.8
V
V
OL1
Low-level output voltage
I
OL
= 4.0mA, V
DD
= 4.5V (TTL)
0.4
V
V
OL2
Low-level output voltage
I
OL
= 200
μ
A, V
DD
= 4.5V (CMOS)
V
SS
+ 0.10
V
V
OH1
High-level output voltage
I
OH
= -200
μ
A, V
DD
= 4.5V (CMOS)
V
DD
-0.1
V
V
OH2
High-level output voltage
I
OH
= -2.0mA, V
DD
= 4.5V (TTL)
2.4
V
C
IN 1
Input capacitance
= 1MHz, V
DD
= 5.0V
V
IN
= 0V
15
pF
C
IO
1, 4
Bidirectional I/O capacitance
= 1MHz, V
DD
= 5.0V
V
OUT
= 0V
15
pF
I
IN
Input leakage current
V
IN
= 0V to V
DD
-5
5
μ
A
I
OZ
Three-state output leakage
current
V
O
= 0V to V
DD
V
DD
= 5.5V
OE = 5.5V
-10
10
μ
A
I
OS
2,3
Short-circuit output current
V
DD
= 5.5V, V
O
= V
DD
V
DD
= 5.5V, V
O
= 0V
-90
90
mA
mA
I
DD1
(OP)
5
Supply current operating
@25.0MHz (40ns product)
@22.2MHz (45ns product)
TTL inputs levels (I
OUT
= 0), V
IL
=
0.2V
V
DD
, PE = 5.5V
125
117
mA
mA
I
DD2
(SB)
post-rad
Supply current standby
CMOS input levels V
IL
= V
SS
+0.25V
CE = V
DD
- 0.25 V
IH
= V
DD
- 0.25V
2
mA
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