參數(shù)資料
型號(hào): 5962-89494032A
廠商: TEXAS INSTRUMENTS INC
元件分類: 運(yùn)算放大器
英文描述: DUAL OP-AMP, 12000 uV OFFSET-MAX, 0.085 MHz BAND WIDTH, CQCC20
封裝: CERAMIC, LCC-20
文件頁(yè)數(shù): 12/46頁(yè)
文件大?。?/td> 1011K
代理商: 5962-89494032A
TLC27L2, TLC27L2A, TLC27L2B, TLC27L7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS052D OCTOBER 1987 REVISED OCTOBER 2005
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
These devices use Texas Instruments silicon-gate LinCMOS
technology, which provides offset voltage
stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and low power consumption make these cost-effective
devices ideal for high gain, low frequency, low power applications. Four offset voltage grades are available
(C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10 mV) to the high-precision TLC27L7
(500
V). These advantages, in combination with good common-mode rejection and supply voltage rejection,
make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS
operational amplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27L2 and
TLC27L7. The devices also exhibit low voltage single-supply operation and ultra-low power consumption,
making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input
voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up.
The TLC27L2 and TLC27L7 incorporate internal ESD-protection circuits that prevent functional failures at
voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in
handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-Suffix devices are characterized for operation from 0
°C to 70°C. The I-suffix devices are characterized
for operation from 40
°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of 55
°C to 125°C.
equivalent schematic (each amplifier)
P5
P6
OUT
N7
N6
R7
N4
C1
R5
N3
GND
N2
D2
R4
D1
R3
N1
IN +
IN
P1
R1
P2
R2
N5
R6
P3
P4
VDD
相關(guān)PDF資料
PDF描述
5962-89494042A DUAL OP-AMP, 3750 uV OFFSET-MAX, 0.14 MHz BAND WIDTH, CQCC20
5962-8949404PA DUAL OP-AMP, 3750 uV OFFSET-MAX, 0.14 MHz BAND WIDTH, CDIP8
5962-89621012HA OP-AMP, 10000 uV OFFSET-MAX, 50 MHz BAND WIDTH, CDFP10
5962-89621012PA OP-AMP, 10000 uV OFFSET-MAX, 50 MHz BAND WIDTH, CDIP8
5962-89621012VPA OP-AMP, 10000 uV OFFSET-MAX, 50 MHz BAND WIDTH, CDIP8
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