參數(shù)資料
型號(hào): 50UQ03G
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 整流器
英文描述: 5.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-262AA
封裝: SIMILAR TO TO-251, 3 PIN
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 116K
代理商: 50UQ03G
Document Number: 94231
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 17-Oct-08
1
Schottky Rectifier, 5.5 A
50UQ03GPbF
Vishay High Power Products
FEATURES
150 °C TJ operation
Unique I-PAK outline
Center tap configuration
Small foot print
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for AEC Q101 level
DESCRIPTION
The 50UQ03GPbF I-PAK Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
drives, switching power supplies, converters, freewheeling
diodes, battery charging, and reverse battery protection.
PRODUCT SUMMARY
IF(AV)
5.5 A
VR
30 V
I-PAK
Base
cathode
Anode
1
3
4, 2
Anode
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform
5.5
A
VRRM
30
V
IFSM
tp = 5 s sine
240
A
VF
5 Apk, TJ = 125 °C
0.35
V
TJ
Range
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
50UQ03GPbF
UNITS
Maximum DC reverse voltage
VR
30
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC = 136 °C, rectangular waveform
5.5
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
240
10 ms sine or 6 ms rect. pulse
100
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 2.0 A, L = 5 mH
10
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 s
Frequency limited by TJ maximum VA = 1.5 x VR typical
2.0
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
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