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參數(shù)資料
| 型號： | 50SQ080TR |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 80 V, SILICON, RECTIFIER DIODE, DO-204AR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 160K |
| 代理商： | 50SQ080TR |
50SQ... Series
Bulletin PD-2.060 rev. G 06/05
2
www.irf.com
V
FM
Max. Forward Voltage Drop
(1)
0.66
V
@ 5A
* See Fig. 1
0.77
V
@ 10A
0.52
V
@ 5A
0.62
V
@ 10A
I
RM
Max. Reverse Leakage Current (1)
0.55
mA
T
J =
25 °C
* See Fig. 2
7
mA
T
J = 125 °C
C
T
Max. Junction Capacitance
500
pF
V
R = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance
10
nH
Measured lead to lead 5mm from body
dv/dt Max. Voltage Rate of Change
10000
V/ s
(Rated V
R)
T
J =
25 °C
T
J = 125 °C
V
R = rated VR
Parameters
50SQ
Units
Conditions
Electrical Specifications
T
J
Max. Junction Temperature Range
-55 to 175
°C
T
stg
Max. Storage Temperature Range
-55 to 175
°C
R
thJL
Max. Thermal Resistance Junction
8.0
°C/W DC operation
* See Fig. 4
to Lead
1/8 inch lead leangth
R
thJA Typical Thermal Resistance,
44
°C/W
Junction to Air
wt
Approximate Weight
1.4(0.049) g (oz.)
Case Style
DO - 204AR
JEDEC
Thermal-Mechanical Specifications
Parameters
50SQ
Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
I
F(AV) Max. Average Forward Current
5
A
50% duty cycle @ T
C = 119° C, rectangular wave form
* See Fig. 5
I
FSM
Max. Peak One Cycle Non-Repetitive
1900
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 7
290
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
7.5
mJ
T
J = 25 °C, IAS = 1.0 Amps, L = 15 mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J max. VA = 1.5 x VR typical
Parameters
50SQ Units
Conditions
Absolute Maximum Ratings
A
Part number
50SQ060
50SQ080
50SQ100
V
R
Max. DC Reverse Voltage (V)
60
80
100
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Following any rated
load condition and
with rated VRRM applied
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