參數(shù)資料
型號(hào)： 5082-3379#T50
廠商： AGILENT TECHNOLOGIES INC
元件分類： PIN二極管
英文描述： 50 V, SILICON, PIN DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù)： 3/4頁(yè)
文件大小： 71K
代理商： 5082-3379#T50
3
Typical Parameters at TA = 25
°C (unless otherwise noted)
IF – FORWARD BIAS CURRENT (mA)
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
10,000
1000
100
10
1
0.1
RF
RESISTANCE
(OHMS)
0.001
0.01
0.1
1
10
100
5082-3001
5082-3039
5082-3077
IN5719
100
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
I F
–
FORWARD
CURRENT
(mA)
VF – FORWARD VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage.
5082-3001, 3039,
3077, 3080
IN5719
125
°C
25
°C
–60
°C
Figure 3. Typical RF Resistance vs.
Forward Bias Current.
IF – FORWARD BIAS CURRENT (mA)
100,000
10,000
1000
100
10
1
RF
RESISTANCE
(OHMS)
0.001
0.01
0.1
1
10
100
5082-3080
5082-3379
5082-3081
REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance vs.
Reverse Voltage.
1.0
.5
0
CAPACITANCE
(pF)
010
20
30
40
50
60
70
Figure 5. Typical Capacitance vs.
Reverse Voltage.
5082-3001
3039
3077
IN5719
5082-3039
IN5719
5082-3001
REVERSE VOLTAGE (V)
2.5
.5
1.0
1.5
2.0
0
CAPACITANCE
(pF)
010
20
30
40
50
60
70
5082-3080
5082-3081
5082-3379
5082-3188
Figure 7. Typical Second Order
Intermodulation Distortion.
FREQUENCY (MHz)
0
80
60
40
20
100
BELOW
FIRST
ORDER
(dB)
010
20
30
40
50
60
80
70
10 dB Bridged Tee Attenuator
40 dB mV Output Levels
One Input Frequency Fixed 100 MHz
5082-3081
Figure 6. Typical Reverse Recovery Time
vs. Forward Current for Various Reverse
Driving Voltages.
FORWARD CURRENT (mA)
REVERSE
RECOVERY
TIME
(ns)
010
20
30
VR = 5V
VR = 10V
VR = 20V
1000
100
10
5082-3080
5082-3379
Figure 8. Typical Cross Intermodulation
Distortion.
MODULATED FREQUENCY (MHz)
10
70
60
50
40
30
20
80
BELOW
FIRST
ORDER
(dB)
010
20
30
40
50
60
80
70
PIN Diode Cross Modulation
10 dB Bridged Tee Attenuator
Unmodulated Frequency 100 MHz
100% Modulation 15 kHz
40 dB mV Output Levels
5082-3081
5082-3080
5082-3379
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