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參數(shù)資料
| 型號： | 5082-3077 |
| 元件分類： | PIN二極管 |
| 英文描述： | 200 V, SILICON, PIN DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 144K |
| 代理商： | 5082-3077 |
2
Mechanical Specifications
TheAvagoOutline15packagehasaglasshermeticsealwith
dumet leads. The lead finish is 95-5 tin-lead (SnPb) for all
PIN diodes. The leads on the Outline 15 package should be
restrictedsothatthebendstartsatleast1/16 inch(1.6 mm)
from the glass body. Typical package inductance and ca-
pacitance are 2.5 nH and 0.13 pF, respectively. Marking is
by digital coding with a cathode band.
General Purpose Diodes
Electrical Specifications at T
A = 25°C
Maximum
Minimum
Maximum
Part
Total
Breakdown
Residual Series
Effective Carrier
Reverse Recovery
Number
Capacitance
Voltage
Resistance
Lifetime
Time
5082-
C
T (pF)
V
BR (V)
R
S ()
τ (ns)
t
rr (ns)
General Purpose Switching and Attenuating
3001
0.25
200
1.0
100 (min.)
100 (typ.)
3039
0.25
150
1.25
100 (min.)
100 (typ.)
1N5719
0.3**
150
1.25
100 (min.)
100 (typ.)
3077
0.3
200
1.5
100 (min.)
100 (typ)
Band Switching
3188
1.0*
35
0.6**
70 (typ.)*
12 (typ.)
Test
V
R = 50 V
V
R = VBR
I
F =100 mA
I
F = 50 mA
I
F = 20 mA
Conditions
*V
R = 20 V
Measure
*I
F = 20 mA
I
R = 250 mA
V
R = 10 V
**V
R = 100 V
I
R ≤ 10 A
**I
F = 10 mA
*I
F = 10 mA
90% Recovery
f = 1 MHz
f = 100 MHz
*I
R = 6 mA
Notes:
Typical CW power switching capability for a shunt switch in a 50 system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specifications at T
A = 25°C
Max.
High
Low
Difference
Effective
Min.
Residual
Max.
Resistance
in
Carrier
Breakdown
Series
Total
Limit, R
H ()
Limit, R
L ()
Resistance
Part
Lifetime
Voltage
Resistance
Capacitance
vs. Bias
Number
τ (ns)
V
BR (V)
R
S ()
C
T (pF)
Min.
Max.
Min.
Max.
Slope, Dc
5082-3080
1300 (typ.)
100
2.5
0.4
1000
8**
1N5767*
1300 (typ.)
100
2.5
0.4
1000
8**
5082-3379
1300 (typ.)
50
0.4
8**
5082-3081
2500 (typ.)
100
3.5
0.4
1500
8**
Test
I
F = 50 mA
V
R = VBR,
I
F = 100 mA
V
R = 50 V
I
F = 0.01 mA
I
F = 1.0 mA
Batch
Conditions I
R = 250 mA
Measure f = 100 MHz
f = 1 MHz
f = 100 MHz
I
F = 20 mA**
Matched at
I
R ≤ 10 A
f = 100 MHz
I
F = 0.01 mA
and 1.0 mA
f = 100 MHz
*The 1N5767 has the additional specifications: τ = 1.0 msec minimum
I
R = 1 A maximum at VR = 50 V
V
F = 1 V maximum at IF = 100 mA.
相關PDF資料 |
PDF描述 |
|---|---|
| 5082-3188#T50 | 35 V, SILICON, PIN DIODE |
| 5082-3188#T25 | 35 V, SILICON, PIN DIODE |
| 5082-3039#T50 | 150 V, SILICON, PIN DIODE |
| 5082-3080 | 100 V, SILICON, PIN DIODE |
| 5082-3077#T25 | 200 V, SILICON, PIN DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 5082-3077#T25 | 功能描述:PIN 二極管 200 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續(xù)電流: 頻率范圍:10 MHz to 6 GHz 端接類型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
| 5082-3077#T50 | 功能描述:PIN 二極管 200 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續(xù)電流: 頻率范圍:10 MHz to 6 GHz 端接類型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
| 5082-3077 | 制造商:Avago Technologies 功能描述:DIODE RF PIN |
| 5082-3080 | 功能描述:PIN 二極管 100 VBR 0.4 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續(xù)電流: 頻率范圍:10 MHz to 6 GHz 端接類型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
| 5082-3080#T25 | 功能描述:PIN 二極管 100 VBR 0.4 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續(xù)電流: 頻率范圍:10 MHz to 6 GHz 端接類型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
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