參數(shù)資料
型號(hào)： 5082-2785
廠商： AGILENT TECHNOLOGIES INC
元件分類： 射頻混頻器
英文描述： SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
封裝： HERMETIC SEALED, METAL CERAMIC, H2, 2 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 195K
代理商： 5082-2785
2
Maximum Ratings
Operating and Storage Temperature Range
C2 Packaged Diodes ........................................................ -65
°C to +150 °C
H2 Packaged Diodes ....................................................... -65
°C to +175 °C
Pulse Power Incident at T
CASE = 25°C ..................................................... 1 W
(1
s pulse, Du = 0.001)
CW Power Dissipation at T
CASE = 25°C
(Measured in an infinite heat sink) ............................................... 125 mW
Derate linearly to zero at maximum operating temperature.
Diode Mounting Temperature in Packages
C2 ............................................................................. 235
°C for 10 sec max.
H2 ............................................................................. 260
°C for 10 sec max.
Peak Inverse Voltage .................................................................................. 4 V
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
RF Electrical Specifications at T
A = 25°C
Maximum
IF
Typical
Part
Test
Noise
Impedance
Junction
Number
Freq.
Figure
Z
IF ()
Maximum
Capacitance
5082-
(GHz)
Barrier
NF (dB)
Min.
Max.
SWR
Package
C
j (pF)
2765
9.375
Low
6.0
150
350
1.5:1
Hermetic H2
0.18
2785
Low
6.5
2.0:1
2207
Medium
6.0
200
400
1.5:1
Broadband C2
2209
Medium
6.5
2.0:1
2774
Low
6.0
150
350
1.5:1
2794
Low
6.5
2.0:1
Test
DC Load Resistance = 0
V = 0
Conditions
L.O. Power = 1 mW
IF = 30 MHz, 1.5 dB NF
*Minimum batch size 20 units.
Low Barrier (Zero Bias)
Parameter
Symbol
Typical Value
Units
Test Conditions
Tangential Sensitivity
T
SS
-44
dBm
Zero Bias, R
L = 10 M
P
in = - 30 dBm
Voltage Sensitivity
γ
10
mV/
W
Video Bandwidth = 2 MHz
f = 10 GHz
Video Resistance
R
V
1.8
Μ
Typical Detector Characteristics at T
A = 25°C
Medium Barrier and Low Barrier (DC Bias)
Parameter
Symbol
Typical Value
Units
Test Conditions
Tangential Sensitivity
T
SS
-54
dBm
20
A Bias, R
L = 100 K
P
in = - 40 dBm
Voltage Sensitivity
γ
6.6
mV/
W
Video Bandwidth = 2 MHz
f = 10 GHz
Video Resistance
R
V
1400
相關(guān)PDF資料
PDF描述
5082-2765 SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
5082-2774 SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
5082-2785 SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
5082-2787 SILICON, MIXER DIODE
5082-2750 SILICON, MIXER DIODE
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參數(shù)描述
5082-2787 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DIODE
5082-2794 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY LOW BARRIER DIODE
5082-2800 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
5082-2800#T25 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
5082-2800#T50 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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